microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023 rf & microwave transistors general purpose amplifier applications general description the MS3023 is a common base, hermetically sealed silicon npn microwave power transistor. this device is designed for class-c app lications in the 1 ~ 2 ghz frequency range. gold metallization and emitter bal lasting provide long-term reliability and superior ruggedness. features gold metallizatiom p out = 3 w minimun 2.0 ghz g p = 7.8 db infinite vswr capable @ rated conditions hermetic package common base configuration absolute maximum ratings @ 25 c symbol parameter value units p diss 1 power dissipation 12.5 w i c 1 device current 550 ma v cc collector supply voltage 35 v t j junction temperature (pulsed rf operation) +200 c t stg storage temperature -65 to +150 c q jc 1 junction-case thermal resistance 14.0 c/w notes: 1. at rated output power, pulse conditions a nd msc fixture rev. a: apr. 2010
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023 electrical characteristics @ 25 c symbol characteristics test conditions min typ max units bv cer collector to emitter breakdown i c = 5 ma, r be = 10 45 - - v bv cbo collector to base breakdown i c = 1 ma, i e = 0 ma 45 - - v bv ebo emitter to base breakdown i e = 1 ma, i c = 0 ma 3.5 - - v i ces collector to emitter leakage v be = 0 v, v cb = 28v - - 1.0 ma h fe dc C current gain i c = 200 ma, v ce = 5 v 15 - 120 - functional characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out 3.0 - - w g p power gain 7.8 - - db h c collector efficiency f = 1.0 / 2.0 ghz v cb = 28v p in = 0.5w 35 - - % c ob output capacitance f = 1mhz v cb = 28v - - 6.5 pf typical impedance values dut z s z l frequency (ghz) z s ( ) z l ( ) 1.0 4.4 C j5.5 9.6 + j16.0 1.5 4.5 C j9.0 4.3 + j7.0 2.0 4.6 C j12.5 3.0 + j1.0 * v cc = 28v, p in = 0.5w, p out > 3w input matching network output matching network
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023 typical performance (@ 1.0ghz / 2.0ghz) notes: the fixture is not broad-band. the unit is tested with 1.0 ghz fixt ure and 2.0 ghz fixture. input/output 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0.00 0.10 0.20 0.30 0.40 0.50 0.60 input pow e r (w ) ouput power (w) 1.0 ghz 2.0 ghz ga in 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 0.00 1.00 2.00 3.00 4.00 5.00 6.00 output pow e r (w ) gain (db) 1.0 ghz 2.0 ghz input re turn loss -25.00 -20.00 -15.00 -10.00 -5.00 0.00 0.00 1.00 2.00 3.00 4.00 5.00 6.00 output pow e r (w ) input return loss (db) 1.0 ghz 2.0 ghz efficie ncy 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 80.0% 0.00 1.00 2.00 3.00 4.00 5.00 6.00 output pow e r (w ) effi. (% ) 1.0 ghz 2.0 ghz
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023 MS3023 test circuit layout @ 1.0 ghz MS3023 test circuit component designations and valu es @ 1.0 ghz part description part description c1 1.0pf chip capacitor (atc 600f) c4 2.4pf chip ca pacitor (atc 600f) c2, c5, c6 4.7pf chip capacitor (atc 600f) c3, c7, c8 100pf chip capacitor (atc 600f) c8 47uf 63v electrolytic capacitor pcb rf-35, r =3.55, 30mils, 1oz m1 66 x 1120 mils (w x l) m2 400 x 480 mils (w x l) m3 300 x 450 mils (w x l) m4 66 x 1090 mils (w x l) m5 30 x 1706 mils (w x l) m6 50 x 1740 mils (w x l)
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023 MS3023 test circuit layout @ 2.0 ghz MS3023 test circuit component designations and valu es @ 2.0 ghz part description part description c1 0.2pf chip capacitor (atc 200b) c2 1.7pf chip ca pacitor (atc 200b) c3 1.5pf chip capacitor (atc 200b) c4 2.2pf chip ca pacitor (atc 200b) c5, c8 39pf chip capacitor (atc 200a) c6 0.4pf chip capacitor (atc 200b) c7 0.3pf chip capacitor (atc 200b) c9 100pf chip ca pacitor (atc 200b) c10 47uf 63v electrolytic capacitor pcb arlon, r =2.55, 31mils, 1oz m1 86 x 550 mils (w x l) m2 180 x 135 mils (w x l) m3 86 x 150 mils (w x l) m4 180 x 150 mils (w x l) m5 86 x 625 mils (w x l) m6 650 x 390 mils (w x l) m7 540 x 1015 mils (w x l) m8 86 x 500 mils (w x l) m9 86 x 445 mils (w x l) m10 25 x 1055 mils (w x l) m11 25 x 1040 mils (w x l)
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. MS3023
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